symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol typ max 40 50 67 80 r jl 33 40 symbol typ max 38 50 66 80 r jl 30 40 -30 20 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 7.5 6 30 2.5 1.6 -5.3 -6.6 2.5 1.6 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 20 drain-source voltage t a =70c power dissipation t a =25c p d units c/w junction and storage temperature range -55 to 150 -55 to 150 thermal characteristics: n-channel parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state c/w maximum junction-to-lead c steady-state c/w thermal characteristics: p-channel c/w c/w maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state features n-channel p-channel v ds (v) = 30v -30v i d = 7.5a (v gs = 10v) -6.6a (v gs = -10v) r ds(on) < 28m ? (v gs = 10v) < 35m ? (v gs = -10v) < 43m ? (v gs = 4.5v) < 58m ? (v gs = -4.5v) the AOP605 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. standard product AOP605 is pb-free (meets rohs & sony 259 specifications). AOP605l is a green product ordering option. AOP605 and AOP605l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 pdip-8 g2 d2 s2 g1 d1 s1 n-channel p-channel complementary enhancement mode field effect transistor AOP605 general description www.freescale.net.cn 1 / 7
AOP605 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 22.6 28 t j =125c 33 43 m ? g fs 12 16 s v sd 0.76 1 v i s 4a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 3 3.6 ? q g (10v) 13.84 16.6 nc q g 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 20 ns q rr 7.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a gate-body leakage current v ds =0v, v gs =20v v ds =5v, i d =7.5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v turn-on rise time maximum body-diodecontinuous current dynamic parameters m ? v gs =4.5v, i d =6.0a r ds(on) static drain-source on-resistance v gs =10v, i d =7.5a forward transconductance switching parameters total gate charge gate source charge gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz body diode forward voltage i s =1a, v gs =0v v gs =0v, v ds =15v, f=1mhz reverse transfer capacitance input capacitance output capacitance. body diode reverse recovery charge body diode reverse recovery time total gate charge v gs =4.5v, v ds =15v, i d =7.5a i f =7.5a, di/dt=100a/ s i f =7.5a, di/dt=100a/ s turn-off delaytime turn-off fall time turn-on delaytime v gs =10v, v ds =15v, r l =2.0 ? , r gen =6 ? a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : june 2005 www.freescale.net.cn 2 / 7
AOP605 typical electrical and thermal characteristics: n-channe l 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.5a 125c 25c 25c i d =7.5a 5v 6v www.freescale.net.cn 3 / 7
AOP605 typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =7.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s www.freescale.net.cn 4 / 7
AOP605 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m ? g fs 13 s v sd -0.76 -1 v i s -4.2 a c iss 920 1100 pf c oss 190 pf c rss 122 pf r g 3.6 4.4 ? q g (10v) 18.5 22.2 nc q g (4.5v) 9.6 11.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 24 ns q rr 8.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-6.6a, di/dt=100a/ s body diode reverse recovery charge i f =-6.6a, di/dt=100a/ s turn-on delaytime v gs =-10v, v ds =-15v, r l =2.3 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.6a reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance v ds =-5v, i d =-6.6a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-6.6a m ? v gs =-4.5v, i d =-5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v a gate-body leakage current v ds =0v, v gs =20v drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any en application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : june 2005 www.freescale.net.cn 5 / 7
AOP605 typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 25 30 35 40 45 50 55 60 65 70 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.6a 25c 125c i d =-6.6a -4.5v -5v www.freescale.net.cn 6 / 7
AOP605 typical electrical and thermal characteristics : p-channel 0 2 4 6 8 10 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j ( max ) =150c, t a =25c v ds =-15v i d =-6.6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 7
|
